Characterization of strength properties of thin polycrystalline silicon films for MEMS applications

The aim of this work is to characterize the strength properties of polycrystalline silicon (polysilicon) with the use of tensile and bending test specimens. The strength of thin polysilicon films with different geometry, size and stress concentrations has been measured and correlated with the effective size of the specimen and its stress distribution. The test results are evaluated using a probabilistic strength approach based on the weakest link theory with the use of STAU software. The use of statistic methods of strength prediction of polysilicon test structures with a complex geometry and loading based on test values for standard material tests specimen has been evaluated.     

化学沉积法制备的Ni(P)、Ni(B)纳米薄膜的结构与磁性

用化学沉积法制备了系列Ni(P),Ni(B)合金薄膜样品，用X射线衍射结构分析方法证明样品由尺寸为纳米量级的颗粒组成，样品在磁性上表现出超顺磁性，对热磁处理前后的磁学参数进行了比较研究。     

Low-resistance polysilicon process in contact application for high density devices

For the lowest resistance, it is required to have the epitaxial silicon contact between the silicon plug and the substrate and good step coverage at the high aspect-ratio contact holes, simultaneously. In this work, a double polysilicon (DPS) deposition technique was proposed for the requirements. The first, thin silicon layer is deposited in a single-wafer process chamber with an in-situ H₂-RTP (rapid thermal process) treatment for the epitaxial contact, and the second silicon layer is formed in a batch-type furnace for good step coverage. From chain resistance, Kelvin R_c, and current-voltage (I–V) measurement, the DPS process meets both low resistance and good uniformity, so that it suggests a breakthrough in the small-sized, semiconductor device application.     

硫铁矿烧渣制聚硅硫酸铁工艺条件探讨

以硫铁矿烧渣及水玻璃为原料制备无机高分子絮凝剂聚硅硫酸铁(PSFS),产品成本低,净水效果好,达到了烧渣综合利用的目的.本文研究了不同调节酸及陈化时间对活化硅酸的影响;不同Si/Fe摩尔比对净水效果的影响;同时考察了引入硼离子后对净水效果及产品稳定性的影响.确定以盐酸为调节酸、陈化时间12～14 h、Si/Fe摩尔比0.8为最佳条件.     

Al金属多晶硅纳米膜欧姆接触的制作

利用低压化学气相淀积法（LPCVD）在表面有热氧化二氧化硅的（100）硅衬底上生长80nm厚多晶硅纳米膜,并对其界面进行表征.制作出单层Al金属的欧姆接触样品,在不同退火温度条件下对样片的电阻进行测量.结果表明,退火使欧姆接触的电阻率降低,接触电阻率可达到2.41×10-3Ω.cm2.     

Ni100-XPX纳米薄膜微观结构与磁性的研究

用化学沉淀法制备了纳米薄膜Ni100-XPX（X=2．40，2．89，3．21，3．60，4．64，5．45，7．64）系列样品。用Scherrer法计算出组成薄膜的颗粒的尺寸为7～15nm。利用振动样品磁强计测量了材料的磁学参数。对晶格常数、饱和磁化强度、居里温度与磷含量的关系进行了详细的分析。     

纳米Pt膜的晶粒尺寸及其对热导率的影响

采用电子束-物理气相沉积法（EB-PVD）制备了6个厚度为15-62nm的铂薄膜，研究了纳米薄膜的晶粒尺寸及其对热导率的影响规律．当薄膜厚度小于30nm时，晶粒平均尺寸接近于薄膜的厚度；晶粒尺寸随着薄膜厚度的增加而增大并趋于定值；当薄膜厚度大于30nm时，晶粒尺寸约为20nm．受薄膜的表面和内部晶界的综合影响，铂纳米薄膜的热导率大大低于体材料的值，并且纳米薄膜的热导率随着薄膜厚度的增加而增大并趋于一个低于体材料热导率的值．     

Digital‐to‐analog converter with gamma correction on glass substrate for TFT‐panel applications

Abstract— Low‐temperature polysilicon (LTPS) technology has a tendency towards integrating all circuits on glass substrate. However, the poly‐Si TFTs suffered poor uniformity with large variations in the device characteristics due to a narrow laser process window for producing large‐grained poly‐Si TFTs. The device variation is a serious problem for circuit realization on the LCD panel, so how to design reliable on‐panel circuits is a challenge for system‐on‐panel (SOP) applications. In this work, a 6‐bit R‐string digital‐to‐analog converter (DAC) with gamma correction on glass substrate for TFT‐panel applications is proposed. The proposed circuit, which is composed of a folded R‐string circuit, a segmented digital decoder, and reordering of the decoding circuit, has been designed and fabricated in a 3‐μm LTPS technology. The area of the new proposed DAC circuit is effectively reduced to about one‐sixth compared to that of the conventional circuit for the same LTPS process.     

硅基单结太阳能电池的制备技术、缺陷及其性能的研究

首先综述了硅基单结太阳能电池的分类、制备方法及进展,介绍了化学气相沉积法、液相外延法(LPPE)、金属诱导结晶法(MIC)、磁控溅射法以及分子束外延法等各种硅基太阳能电池的制备方法,阐述了各种制备工艺的优缺点。其次,总结了单晶硅、多晶硅以及非晶硅太阳能电池在组织结构、缺陷方面的研究现状。最后,对硅基太阳能电池的机械、电学、光学以及光电性能等方面的研究进展做了论述。     

Digital time‐modulation pixel memory circuit in LTPS technology

Abstract— A digital time‐modulation pixel memory circuit on glass substrate has been designed and verified for a 3‐μm low‐temperature polysilicon (LTPS) technology. From the experimental results, the proposed circuit can generate 4‐bit digital codes and the corresponding inversion data with a time‐modulation technique. While the liquid‐crystal‐display (LCD) panel operates in the still mode, which means the same image is displayed on the panel, a data driver for an LCD panel is not required to provide the image data of the frame by the proposed pixel memory circuit. This pixel memory circuit can store the frame data and generate its corresponding inversion data to refresh a static image without activating the data driver circuit. Therefore, the power consumption of a data driver can be reduced in the LCD panel.